Возврат к шагу #6
Отредактированно Miroslav Djuric -
Правка одобрена автор Miroslav Djuric
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Шаг Линий
| [* black] Check out the A7 processor's cross-section. Every little hump (through which you see that yellow line) is a [https://en.wikipedia.org/wiki/Transistor|transistor]. By measuring the total distance between ten of these transistors, we can estimate a chip’s manufacturing process—essentially how tightly the manufacturer can pack in all that processing power. | |
| [* black] The techs at Chipworks took out their [nano]meter stick and measured the distance between these transistors, which at first seemed very similar to the A6. | |
| [* black] But wait! It turns out that the A7′s “gate pitch” — the distance between each transistor — is 114 nm, compared to the A6′s 123 nm. | |
| - | [* black] Those 9 nm are a |
| + | [* black] Those 9 nm are a big deal. It turns out that the A7 is made with the same 28 nm process as the eight-core [http://www.samsung.com/global/business/semiconductor/minisite/Exynos/products5octa.html|Samsung Exynos 5410], the current flagship CPU for Samsung’s own Galaxy line. |
| [* black] So what does that translate to? Applying some mathematrickery, this seemingly small change equates to having the same computing power, but in 77% of the original area. And given that the A7 processor is even larger in area than the A6, that means even more processing power to lead a healthy, smartphone-laden lifestyle. |